The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model-Reference-Cited by-同舟云学术

The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model

Published:2014-01-29 Issue:5-6 Volume:27 Page:863-874
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Turin Valentin¹,Zebrev Gennady²,Makarov Sergey³,Iñiguez Benjamin⁴,Shur Michael⁵

Affiliation:

1. State University - Education-Science-Production Complex; Naugorskoe shosse 29, Orel 302020 Russia

2. National Research Nuclear University ‘MEPhI’; Kashirskoye shosse 31, Moscow 115409 Russia

3. SYMICA Inc; 22 Glushkova Str., Unit 174, Kiev 03187 Ukraine

4. Universitat Rovira i Virgili; Avinguda dels Paisos Catalans 26, Tarragona 43007, Catalonia Spain

5. Rensselaer Polytechnic Institute; CII 9017, 110 8-th Street, Troy NY 12180 USA

Funder

Russian Foundation for Basic Research

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

Reference15 articles.

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1. Compact Modeling of Body Effect for “Extrinsic” MOSFETs;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09