Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2336299
Reference46 articles.
1. Metal semiconductor field effect transistor based on single crystal GaN
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. 30-W/mm GaN HEMTs by Field Plate Optimization
4. Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors
5. A high-power AlGaN/GaN heterojunction field-effect transistor
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