Author:
Turin Valentin O.,Shkarlat Roman S.,Shure Michael S.,Kshensky Oleg N.,Poyarkov Vyacheslav N.,Zebrev Gennady I.,Iñiguez Benjamin
Reference5 articles.
1. Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation;Turin,2009
2. The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model
3. Physics of Semiconductor Devices
4. Device Modeling for Analog and RF CMOS Circuit.;Ytterdal,2003
5. A linear approximation for the dependence of the MOSFET drain current in saturation regime on drain bias with accounting source and drain resistances;Turin,2017
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2 articles.
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