Self-heating in ultra-wide bandgap n-type SrSnO3 thin films

Author:

Golani Prafful1ORCID,Saha Chinmoy Nath2ORCID,Sundaram Prakash P.1ORCID,Liu Fengdeng3,Truttmann Tristan K.3ORCID,Chaganti V. R. Saran Kumar1ORCID,Jalan Bharat3ORCID,Singisetti Uttam2ORCID,Koester Steven J.1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA

2. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14240, USA

3. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

Abstract

This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I–V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.

Funder

National Science Foundation

Air Force Office of Scientific Research

II-VI Foundation Block Gift Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Evaluating the thermal performance of perovskite SrSnO3 field effect transistors;2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm);2023-05-30

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