Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics-Reference-Cited by-同舟云学术

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Published:2016-05 Issue:23 Volume:1 Page:1735-1742
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Alshehri Bandar,Dogheche Karim,Belahsene Sofiane,Janjua Bilal,Ramdane Abderrahim,Patriarche Gilles,Ng Tien-Khee,S-Ooi Boon,Decoster Didier,Dogheche Elhadj

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2016.417.pdf

Reference22 articles.

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5. Pawan Mishra, Bilal Janjua, Tien Khee Ng, Chao Shen, Abdelmajid Salhi, Ahmed Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, “Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs”, IEEE Photonics Journal, 7(3), article number 2300209, (2015).

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