Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements-Reference-Cited by-同舟云学术

Determination of band tail widths in MOCVD grown InGaN single layer within GaN based p-i-n LED structure through photo-induced measurements

Published:2023-03 Issue: Volume:255 Page:119543
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Özdemir Orhan^ORCID,Bozkurt Kutsal,Kuruoğlu Neslihan Ayarcı^ORCID,Baş Hanife^ORCID,Sarcan Fahrettin,Erol Ayşe^ORCID,Alshehri Bandar,Dogheche Karim,Dogheche Elhadj

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

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1. Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure;Journal of Luminescence;2023-05