Yellow luminescence and related deep states in undoped GaN-Reference-Cited by-同舟云学术

Yellow luminescence and related deep states in undoped GaN

Published:1997-02-15 Issue:7 Volume:55 Page:4689-4694
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Calleja E.,Sánchez F. J.,Basak D.,Sánchez-García M. A.,Muñoz E.,Izpura I.,Calle F.,Tijero J. M. G.,Sánchez-Rojas J. L.,Beaumont B.,Lorenzini P.,Gibart P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.4689/fulltext

Reference32 articles.

1. Electronic structures and doping of InN,InxGa1−xN, andInxAl1−xN

2. Atomic geometry and electronic structure of native defects in GaN

3. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

4. Ca and O ion implantation doping of GaN

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