Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy

Abstract

AbstractUsing contactless electroreflectance and surface photovoltage spectroscopy at room temperature we have nondestructively evaluated the band bending (carrier type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the GaN at the InGaN/GaN interface of samples of epitaxial InGaN grown on top of thick GaN epilayers/sapphire, having average n- and p-type character.