Development of the Nitride Laser Diode Arrays for Video and Movie Projectors-Reference-Cited by-同舟云学术

Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

Published:2016-01 Issue:2 Volume:1 Page:103-108
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Perlin Piotr,Stańczyk Szymon,Najda Steve,Suski Tadek,Wiśniewski Przemek,Makarowa Irina,Marona Łucja,Kafar Anna,Bojarska Agata,Czernecki Robert,Sarzała Robert,Kuc Maciej,Leszczynski Mike

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2016.132.pdf

Reference10 articles.

1. P. Janssens, K. Malfait, “Future prospects of high-end laser projectors”, Proc. SPIE 7232, Emerging Liquid Crystal Technologies IV, 72320Y, (2009)

2. L. A. Coldren, S. W. Corzine, M. L. Mashanovitch, “Diode Lasers and Photonic Integrated Circuits”, 2nd Edition, Wiley 2012.

3. M. Hempel, J.W. Tomm, B. Stojetz, H. König, U. Strauss, T. Elsaesser, Kinetics of catastrophic optical damage in GaN-based diode lasers. Semiconductor Science and Technology, 30, 072001 (2015)

4. P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czernecki, S. Najda, M. Zajac, R. Kucharski, „InGaN Laser Diode Mini-Arrays” Applied Physics Express 4, 062103 (2011)

5. S. Goto, M. Ohta, Y. Yabuki, Y. Hoshina, K. Naganuma, K. Tamamura, T. Hashizu, and M. Ikeda: Phys. Status Solidi A 200, 122 (2003).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation;Materials;2024-09-13

2. Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors;Micromachines;2023-01-31

3. Growth of bulk GaN crystals;Journal of Applied Physics;2020-08-07

4. Critical analysis of step‐graded polarisation engineered electron‐blocking layer optimisation for InGaN MQW laser diode;IET Optoelectronics;2019-10

5. Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode;Laser Physics;2019-03-20