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InGaN Laser Diode Mini-Arrays

Published:2011-06-07 Issue:6 Volume:4 Page:062103
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Perlin Piotr,Marona Lucja,Holc Katarzyna,Wisniewski Przemek,Suski Tadek,Leszczynski Mike,Czernecki Robert,Najda Stephen,Zajac Marcin,Kucharski Robert

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=6/a=062103/pdf

Reference5 articles.

1. High‐power GaN‐based semiconductor lasers

2. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

3. Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

4. Excellent crystallinity of truly bulk ammonothermal GaN

5. Nitride-based quantum structures and devices on modified GaN substrates

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers;Opto-Electronics Review;2024-01-03

2. Physics and Technology of AlGaInN‐Based Laser Diode;digital Encyclopedia of Applied Physics;2021-06-28

3. Properties of Ammonothermal Crystals;Ammonothermal Synthesis and Crystal Growth of Nitrides;2021

4. Edge Emitting Laser Diodes and Superluminescent Diodes;Nitride Semiconductor Technology;2020-08-03

5. By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars;IEEE Journal of Selected Topics in Quantum Electronics;2019-11

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