By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars-Reference-Cited by-同舟云学术

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By-Emitter Analysis of 450-nm Emitting High-Power Diode Laser Bars

Published:2019-11 Issue:6 Volume:25 Page:1-6
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Mahler Felix^ORCID,Kernke Robert,Tomm Jens W.^ORCID,Konig Harald,Stojetz Bernhard,Ali Muhammad,Lell Alfred

Funder

German BMBF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/2944/8602421/08678403.pdf?arnumber=8678403

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mode Competition Between Longitudinal and Lateral Modes in III-Nitride Broad-Ridge Laser Diodes;IEEE Journal of Selected Topics in Quantum Electronics;2025-03

2. Physics and Technology of AlGaInN‐Based Laser Diode;digital Encyclopedia of Applied Physics;2021-06-28

3. Blue high power InGaN semiconductor laser diodes: Design optimization of laser bars and single emitters for best performance and reliability;High-Power Diode Laser Technology XVIII;2020-03-02

4. Spectral and spatial dynamics of a multimode GaN-based blue laser diode;Journal of Modern Optics;2020-02-23

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