Critical analysis of step‐graded polarisation engineered electron‐blocking layer optimisation for InGaN MQW laser diode-Reference-Cited by-同舟云学术

Critical analysis of step‐graded polarisation engineered electron‐blocking layer optimisation for InGaN MQW laser diode

Published:2019-10 Issue:5 Volume:13 Page:254-258
ISSN:1751-8776
Container-title:IET Optoelectronics
language:en
Short-container-title:IET Optoelectronics

Author:

Paliwal Avinash¹²^ORCID,Singh Kuldip²,Mathew Manish¹²

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR) CSIR‐Central Electronics Engineering Research Institute (CSIR‐CEERI) Campus Pilani India

2. Optoelectronics and MOEMS Group CSIR‐CEERI Pilani India

Funder

University Grants Commission

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-opt.2018.5110

Reference30 articles.

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3. Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

4. Watt‐class green (530 nm) and blue (465 nm) laser diodes;Murayama M.;Phys. Status Solidi,2017

5. KawaguchiM.ImafujiO.NozakiS.et al.: ‘Record‐breaking high‐power InGaN‐based laser‐diodes using novel thick‐waveguide structure’.Int. Semiconductor Laser Conf. Hyogo Japan 2016 vol.L pp.4–5

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