Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD-Reference-Cited by-同舟云学术

Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD

Published:1997 Issue: Volume:467 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Golikova O. A.,Kuznetsov A. N.,Kudoyarova V. Kh.,Kazanin M. M.,Adriaenssens G. J.,Herremans H.

Abstract

ABSTRACTA systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH4 decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH2)n chains.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference15 articles.

1. PHOTOMODULATION SPECTROSCOPY OF GAP STATES IN DOPED AND UNDOPED a-Si:H

2. Optimisation of the hydrogen content in a-Si:H deposited at high rate by dc magnetron sputtering

3. Photoinduced midgap absorption in tetrahedrally bonded amorphous semiconductors

4. Defect formation during growth of hydrogenated amorphous silicon

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1. Photoconductivity of nanostructured hydrogenated silicon films;Semiconductors;2002-06

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3. Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking;MRS Proceedings;1998

4. Changes in Short- and Medium-Range Order in a-Si:H Induced by Light-Soaking, Pseudodoping and Doping With Boron;MRS Proceedings;1998