Changes in Short- and Medium-Range Order in a-Si:H Induced by Light-Soaking, Pseudodoping and Doping With Boron

Abstract

ABSTRACTA study of a-Si:H structure on the scales of short- and medium- range order has been carried out by the Raman spectroscopy method. Undoped a-Si:H films were deposited by the conventional rf- PECVD with some special variations in the process conditions ( pseudodoping technique); doping with boron was performed from a gas phase as well as by ion implantation. Changes in short- and medium- range order induced by light-soaking, pseudodoping and doping with boron were determined and compared.