Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking

Abstract

ABSTRACTLight-soaking kinetics of photoconductivity at room temperature for undoped a-Si:H films deposited by rf-plasma enhanced chemical vapor deposition and by dc-magnetron assisted decomposition at T8 = 300 and 350°C have been investigated. The rate of degradation has been expressed by the value of exponent of the power law: σph∼t−y. The hydrogen content in the films, the type of Si-H bonds and their contribution as well as the Fermi level position were controlled by changes in the deposition conditions. Hydrogen's effect on the y value was shown for the different cases. The films, having γ=0, were identified.