Author:
Knapp J. A.,Picraux S. T.
Abstract
ABSTRACTSilicon-on-insulator films have been formed using a 20 mm by 1 mm line-source electron beam, with sample sweep speeds of 100–500 cm/sec and peak beam power densities up to 75 kW/cm2. Films were formed over 1 and 2 μm thick SiO2 isolating layers on 4°C diameter Si<100> wafers, with stripe openings of 5 to 100 μ width for seeding the crystallization from the substrate. Films consisted of Si layers from 0.4 to 1.0 μm thickness, with a capping layer of 2 μm SiO2. By sweeping the beam parallel to the long axis of the seed openings, smooth, oriented films were obtained, with low-angle grain boundaries confined to midway between seed openings. Best results were obtained for ≲ 50 μm spacing between seed openings.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献