High-Energy Low-Dose Implanted Silicon Annealed by Transient RTA

Abstract

AbstractTransient RTA performed in the sub-second time range has been applied for low-thermal-budget post-implantation anneal of low-dose, high-energy P and B implanted wafers. This very rapid thermal step not only accomplished full activation and minimum profile motion but was also effective in reducing the resident damage-associated lifetime problems compared to conventional annealing. The generation lifetime and velocity depth-profiling used for process characterization shed light on the role of metallic impurities in the high-energy B and P implanted samples during the fast-quenching operations in determining the electrical behavior.