Gate-Stack Engineering for Self-Organized Ge-dot/SiO2/SiGe-Shell MOS Capacitors
Author:
Publisher
Frontiers Media SA
Subject
Materials Science (miscellaneous)
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1. Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices;Nanomaterials;2021-10-16
2. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices;Nanotechnology;2018-03-19
3. Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO_2/SiGe photoMOSFETs under gate modulation;Optics Express;2017-10-05
4. High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects;Scientific Reports;2017-03-16
5. ‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions;Journal of Physics D: Applied Physics;2017-02-09
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