Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO_2/SiGe photoMOSFETs under gate modulation-Reference-Cited by-同舟云学术

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Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO_2/SiGe photoMOSFETs under gate modulation

Published:2017-10-05 Issue:21 Volume:25 Page:25467
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kuo Ming-Hao,Hong Po-Yu,Liu Ping-Che,Lee Meng-Chun,Lin Horng-Chih,George Tom,Li Pei-Wen

Funder

Asian Office of Aero-space Research and Development

Ministry of Science and Technology, Taiwan (MOST)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference16 articles.

1. Lasing in direct-bandgap GeSn alloy grown on Si

2. 56 Gb/s Germanium Waveguide Electro-Absorption Modulator

3. The commercialization of silicon photonics

4. High speed and high power polarization insensitive germanium photodetector with lumped structure

5. Device Requirements for Optical Interconnects to Silicon Chips

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1. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization;The Journal of Physical Chemistry C;2024-03-04

2. Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO₂/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform;IEEE Journal of the Electron Devices Society;2022

3. Performance assessment of a new infrared phototransistor based on JL-TFET structure: Numerical study and circuit level investigation;Optik;2020-12

4. Novel solar-blind ultraviolet photodetector based on inserting sputtered ITO ultrathin film for integrated silicon photonics platform;Superlattices and Microstructures;2020-07

5. Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer;Materials Science in Semiconductor Processing;2020-05

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