Performance assessment of a new infrared phototransistor based on JL-TFET structure: Numerical study and circuit level investigation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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1. Design and Investigation of Gate Overlap Step Shape Double Gate (SSDG) TFET for Photosensing Applications;Transactions on Electrical and Electronic Materials;2024-08-03
2. Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector;Transactions on Electrical and Electronic Materials;2023-11-30
3. Optical FOMs of extended-source DG–TFET photodetector in the visible range of the spectrum;Semiconductor Science and Technology;2023-02-09
4. Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor;Semiconductor Science and Technology;2023-02-07
5. Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity;ECS Journal of Solid State Science and Technology;2022-12-01
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