High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep44402.pdf
Reference21 articles.
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2. Liu, J. et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express 15, 11272–11277 (2007).
3. Michel, J., Liu, J. F. & Kimerling, L. C. High-performance Ge-on-Si photodetectors. Nat. Photonics 4, 527–534 (2010).
4. Srinivasan, S. et al. 56 Gb/s Germanium Waveguide Electro-Absorption Modulator. J. Lightwave Technol. 34, 419–424 (2015).
5. Liu, J. et al. Ge-on-Si laser operating at room temperature. Opt. Lett. 35, 679–681 (2010).
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