Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/11/5/743/pdf
Reference51 articles.
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4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
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