Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation-Reference-Cited by-同舟云学术

Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation

Published:2023-08 Issue: Volume:663 Page:414976
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

En-nadir Redouane,El-ghazi Haddou,Leontie Liviu^ORCID,Tihtih Mohammed,Zaki Shrouk E.,Belaid Walid^ORCID,Carlescu Aurelian^ORCID,Zorkani Izeddine

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference48 articles.

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