Affiliation:
1. Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
2. Ulsan Ship and Ocean College, Ludong University, Yantai 264000, China
3. Shandong Liaocheng Laixin Powder Materials Science and Technology Co., Ltd., Liaocheng 252000, China
Abstract
Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province
Introduction and Cultivation Plan of Youth Innovation Talents for Universities of Shandong Province, the Open Project of State Key Laboratory of Superhard Materials
Research Funding of Liaocheng University
Subject
Chemistry (miscellaneous),Analytical Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Molecular Medicine,Drug Discovery,Pharmaceutical Science
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