Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/3/322/pdf
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4. Electrical observations of filamentary conductions for the resistive memory switching in NiO films
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2. Effect of oxygen vacancies injection on the resistance switching properties of Hf0.5Zr0.5O2;Journal of Sol-Gel Science and Technology;2023-11-14
3. HfAlO-based ferroelectric memristors for artificial synaptic plasticity;Frontiers of Physics;2023-09-20
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