Transient characterization of the electroforming process in TiO2 based resistive switching devices-Reference-Cited by-同舟云学术

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Transient characterization of the electroforming process in TiO2 based resistive switching devices

Published:2013-01-14 Issue:2 Volume:102 Page:023507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Noman Mohammad,Sharma Abhishek A.,Meng Lu Yi,Skowronski Marek,Salvador Paul A.,Bain James A.

Funder

Defense Advanced Research Projects Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4776693

Reference9 articles.

1. High switching endurance in TaOx memristive devices

2. Reproducible resistance switching in polycrystalline NiO films

3. Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications

4. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

5. Enhanced bipolar resistive switching of HfO2 with a Ti interlayer

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1. Operating Mechanism and Resistive Switching Characteristics of Two- and Three-Terminal Atomic Switches Using a Thin Metal Oxide Layer;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16

2. Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation;Journal of Applied Physics;2020-06-21

3. Switching failure behaviors and doping enhanced performances of Ni/Al2O3/p+Si resistive switching devices;Journal of Applied Physics;2019-06-28

4. Point contact bipolar resistive switching observed in transparent ZnMgO/ZnO:Ga heterostructure;Journal of Materials Science: Materials in Electronics;2019-03-21

5. Electron emission and ultraviolet electroluminescence from valence-band states and defect conduction bands of electroformed Al-Al2O3-Ag diodes;Journal of Applied Physics;2019-01-14

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