Modeling of Reactive Sputtering—History and Development

Author:

Shapovalov Viktor I.1ORCID

Affiliation:

1. Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University “LETI”, Prof. Popov Str., 5F, 197022 St. Petersburg, Russia

Abstract

This work critically reviews the evolution of reactive sputtering modeling that has taken place over the last 50 years. The review summarizes the main features of the deposition of simple metal compound films (nitrides, oxides, oxynitrides, carbides, etc.) that were experimentally found by different researchers. The above features include significant non-linearity and hysteresis. At the beginning of the 1970s, specific chemisorption models were proposed. These models were based on the assumption that a compound film was formed on the target due to chemisorption. Their development led to the appearance of the general isothermal chemisorption model, which was supplemented by the processes on the surfaces of the vacuum chamber wall and the substrate. The model has undergone numerous transformations for application to various problems of reactive sputtering. At the next step in the development of modeling, the reactive sputtering deposition (RSD) model was proposed, which was based on the implantation of reactive gas molecules into the target, bulk chemical reaction, chemisorption, and the “knock-on effect”. Another direction of the modeling development is represented by the nonisothermal physicochemical model, in which the Langmuir isotherm and the law of mass action are used. Various modifications of this model allowed describing reactive sputtering processes in more complex cases when the sputtering unit included a hot target or a sandwich one.

Publisher

MDPI AG

Subject

General Materials Science

Reference203 articles.

1. Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017;Greene;J. Vac. Sci. Technol. A Vac. Surf. Films,2017

2. The properties of some reactively sputtered metal oxide films;Holland;Vacuum,1953

3. The modern single-layer selenium photo-electric cell;Veszi;J. Br. Inst. Radio Eng.,1953

4. The reactive sputtering of tantalum oxide: Compositional uniformity, phases, and transport mechanisms;Reith;J. Vac. Sci. Technol. A Vac. Surf. Films,1983

5. The transition from αZr to αZrO2 growth in sputter-deposited films as a function of gas O2 content, rare-gas type, and cathode voltage;Kwok;J. Vac. Sci. Technol. A Vac. Surf. Films,1989

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3