Abstract
In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the aim of simultaneously improving device performance as well as addressing the short channel effect (SCE). The GAA-FinFET was built using the technology computer-aided design (TCAD) simulation tool, and then, its electrical characteristics were quantitatively evaluated. The electrical characteristics of the GAA-FinFET were compared to those of conventional FinFET and nano-sheet FET (NSFET) at 7 nm or 5 nm nodes. When comparing the GAA-FinFET against the FinFET, it achieved not only better SCE characteristics, but also higher on-state drive current due to its gate-all-around device structure. This helps to improve the ratio of effective drive current to off-state leakage current (i.e., Ieff/Ioff) by ~30%, resulting in an improvement in DC device performance by ~10%. When comparing the GAA-FinFET against the NSFET, it exhibited SCE characteristics that were comparable or superior thanks to its improved sub-channel leakage suppression. It turned out that the proposed GAA-FinFET (compared to conventional FinFET at the 7 nm or 5 nm nodes, or even beyond) is an attractive option for improving device performance in terms of SCE and series resistance. Furthermore, it is expected that the device structure of GAA-FinFET is very similar to that of conventional FinFET, resulting in further improvement to its electrical characteristics as a result of its gate-all-around device structure without significant modification with respect to the processing steps for conventional FinFET.
Funder
National Research Foundation of Korea
IC Design Education Center
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
3 articles.
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