High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor-Reference-Cited by-同舟云学术

High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

Published:2017-03-16 Issue:3 Volume:17 Page:599
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Wang Liying,Du Xiaohui,Wang Lingyun,Xu Zhanhao,Zhang Chenying,Gu Dandan

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/17/3/599/pdf

Reference22 articles.

1. Resonant pressure sensor based on piezoelectric properties of ferroelectric thick films

2. Application of parametric resonance amplification in a single-crystal silicon micro-oscillator based mass sensor

3. Various applications of resonant pressure sensor chip based on 3-D micromachining

4. Getter free vacuum packaging for MEMS

5. Wafer bonding by low-temperature soldering

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