Abstract
In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 μm in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 μm, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding.
Funder
Ministry of Trade, Industry and Energy
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Cited by
6 articles.
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