Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Author:

Badalà Paolo,Rascunà Simone,Cafra Brunella,Bassi Anna,Smecca Emanuele,Zimbone Massimo,Bongiorno Corrado,Calabretta Cristiano,La Via Francesco,Roccaforte FabrizioORCID,Saggio Mario,Franco Giovanni,Messina AngeloORCID,La Magna Antonino,Alberti AlessandraORCID

Funder

Electronic Components and Systems for European Leadership

Publisher

Elsevier BV

Subject

General Materials Science

Reference26 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

2. Schottky contacts to silicon carbide: physics, technology and applications;Roccaforte,2018

3. Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC;Rascunà;Mater. Sci. Semicond. Process.,2019

4. Laser backside contact annealing of SiC Power devices:A Prerequisite for SiC thin wafer technology;Rupp;Proc. ISPSD,2013

5. Role of the early stages of Ni-Si interaction on the structural properties of the reaction products;Alberti;J. Appl. Phys.,2013

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