Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact-Reference-Cited by-同舟云学术

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Published:2020-03 Issue: Volume:9 Page:100528
ISSN:2589-1529
Container-title:Materialia
language:en
Short-container-title:Materialia

Author:

Badalà Paolo,Rascunà Simone,Cafra Brunella,Bassi Anna,Smecca Emanuele,Zimbone Massimo,Bongiorno Corrado,Calabretta Cristiano,La Via Francesco,Roccaforte Fabrizio^ORCID,Saggio Mario,Franco Giovanni,Messina Angelo^ORCID,La Magna Antonino,Alberti Alessandra^ORCID

Funder

Electronic Components and Systems for European Leadership

Publisher

Elsevier BV

Subject

General Materials Science

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5. Role of the early stages of Ni-Si interaction on the structural properties of the reaction products;Alberti;J. Appl. Phys.,2013

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1. Analysis of energy density and scanning speed impacts on Ni/SiC ohmic contacts during laser annealing;Materials Science in Semiconductor Processing;2024-12

2. Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC;Solid State Phenomena;2024-08-22

3. Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers;Solid State Phenomena;2024-08-22

4. Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing;Solid State Phenomena;2024-08-22

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