Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC-Reference-Cited by-同舟云学术

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Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Published:2019-07 Issue: Volume:97 Page:62-66
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Rascunà S.,Badalà P.,Tringali C.,Bongiorno C.,Smecca E.,Alberti A.,Di Franco S.,Giannazzo F.,Greco G.,Roccaforte F.^ORCID,Saggio M.

Funder

ECSEL

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

2. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

3. Ohmic contacts to SiC;Roccaforte;Int. J. High Speed Electron. Syst.,2005

4. Laser backside contact annealing of SiC power devices: a prerequisite for SiC thin wafer technology;Rupp;Proc. ISPSD,2013

5. Metal/semiconductor contacts to silicon carbide: physics and technology;Roccaforte;Mater. Sci. Forum,2018

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of energy density and scanning speed impacts on Ni/SiC ohmic contacts during laser annealing;Materials Science in Semiconductor Processing;2024-12

2. Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing;Solid State Phenomena;2024-08-22

3. Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers;Solid State Phenomena;2024-08-22

4. Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing;Solid State Phenomena;2024-08-22

5. Toward a Metal-Free Contact Based on Multilayer Epitaxial Graphene on 4H-SiC;IEEE Electron Device Letters;2024-07

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