Author:
Ceponis Tomas,Deveikis Laimonas,Lastovskii Stanislau,Makarenko Leonid,Pavlov Jevgenij,Pukas Kornelijus,Rumbauskas Vytautas,Gaubas Eugenijus
Abstract
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Cited by
3 articles.
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