Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for high energy physics applications-Reference-Cited by-同舟云学术

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Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for high energy physics applications

Published:2013-10-09 Issue:10 Volume:8 Page:P10009-P10009
ISSN:1748-0221
Container-title:Journal of Instrumentation
language:
Short-container-title:J. Inst.

Author:

Díez S,Clark T,Grillo A A,Kononenko W,Martinez-McKinney F,Newcomer F M,Norgren M,Rescia S,Spencer E,Spieler H,Ullán M,Wilder M

Publisher

IOP Publishing

Subject

Mathematical Physics,Instrumentation

Link

http://stacks.iop.org/1748-0221/8/i=10/a=P10009/pdf

Reference24 articles.

1. Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure

2. Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

3. Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications

4. Radiation hardness evaluation of SiGe HBT technologies for the Front-End electronics of the ATLAS Upgrade

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A first look at AS-ROC: a Si-Ge integrated chip readout for fast timing;Journal of Instrumentation;2024-04-01

2. Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors;Sensors;2020-12-02

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