Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering
Author:
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/7/7/156/pdf
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1. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations;Nanotechnology;2023-11-10
2. Modulation of carrier density in indium–gallium–zinc-oxide thin film prepared by high-power impulse magnetron sputtering;Vacuum;2023-01
3. Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films;Journal of Materials Chemistry C;2022
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