Effect of Zr addition on ZnSnO thin-film transistors using a solution process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3524514
Reference15 articles.
1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
2. Novel ZrInZnO Thin-film Transistor with Excellent Stability
3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
4. Tables of Standard Electrode Potentials
5. Ultrathin zirconium oxide films as alternative gate dielectrics
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