Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films-Reference-Cited by-同舟云学术

Electronic influence of ultrathin aluminum oxide on the transistor device performance of binary indium/tin oxide films

Published:2022 Issue:14 Volume:10 Page:5447-5457
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Büschges M. Isabelle¹,Trouillet Vanessa²,Schneider Jörg J.¹^ORCID

Affiliation:

1. Fachbereich Chemie, Eduard-Zintl-Institut, Fachgebiet Anorganische Chemie, Technische Universität Darmstadt, Alarich-Weiss-Straße 12, 64287 Darmstadt, Germany

2. Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM-ESS), Hermann-von-Helmholtz-Platz 1, B 321, 76344 Eggenstein-Leopoldshafen, Germany

Abstract

Controlled aluminum oxide doping at an atomic level into binary indium/tin oxide thin-films allows control of crucial TFT parameters such as the mobility (μsat), the threshold-voltage (Vth) and on/off ratio (IOn/IOff). Moreover, it stabilizes TFT performance under optical stress.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00285J

Reference63 articles.

1. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

2. Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

3. Electronic Structure of Low‐Temperature Solution‐Processed Amorphous Metal Oxide Semiconductors for Thin‐Film Transistor Applications

4. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

5. Combinatorial study of zinc tin oxide thin-film transistors

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