Abstract
Monocrystalline silicon is an important semiconductor material and occupies a large part of the market demand. However, as a hard-brittle material, monocrystalline silicon is extremely prone to happen edge chipping during sawing processing. The edge chipping seriously affects the quality and performance of silicon wafers. In this paper, both conventional and ultrasonicassisted sawing tests were carried out on monocrystalline silicon to study the formation mechanism of edge chipping. The shape and size of edge chipping after sawing process were observed and measured. The experimental results demonstrated that different sawing processes present different material removal modes and edge quality. The mode of crack propagation was continuous cracks in conventional sawing process, while the expansion mode in ultrasonic assisted sawing was blasting microcracks. This results in the cutting force of ultrasonic assisted sawing becomes much smaller than that of conventional sawing process, which can reduce the size of edge chipping and improve the quality of machined surface.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
8 articles.
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