Affiliation:
1. Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2. National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Abstract
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of β-Ga2O3, including those in barrier lowering, impact ionization, and image-force-lowering models, were extracted from experimental results. Similar forward conduction characteristics to SBDs without FMRs were exhibited by the device, and its breakdown characteristics were influenced by structural parameters such as FMR spacing, width, number, epitaxial layer thickness, and doping concentration. A breakdown voltage of 2072 V was achieved by the optimized device at a doping concentration of 1016 cm−3, which was 2.5 times higher than that of a device without FMRs. This study also indicated that for general doping concentrations and epitaxial layer thicknesses, the breakdown voltage with such structures can reach at least 1.5 times higher than that of a device without FMRs. Overall, insights into optimizing the design of β-Ga2O3-based SBDs with FMRs were provided in this study.
Funder
National Key R&D Program of China
China Postdoctoral Science Foundation
Jiangsu Funding Program for Excellent Postdoctoral Talent
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering