Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate
Author:
Wang PeiranORCID,
Deng Chenkai,
Cheng Hongyu,
Cheng WeichihORCID,
Du FangzhouORCID,
Tang Chuying,
Geng Chunqi,
Tao Nick,
Wang Qing,
Yu Hongyu
Abstract
In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.
Funder
National Natural Science Foundation of China
research on novelty low-resistance source/drain ohmic contact for GaN p-FET
research on the fabrication and mechanism of GaN power and RF devices
research on the GaN chip for 5G applications
research on highly reliable GaN power devices and related industrial power systems
Special Funds for the Cultivation of Guangdong College Students’ Scientific and Technological Innovation
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Reference33 articles.
1. Gallium nitride based transistors;Xing;J. Phys. Condens. Matter,2001
2. The toughest transistor yet [GaN transistors];Eastman;IEEE Spectr.,2002
3. Zhang, N., Mehrotra, V., Chandrasekaran, S., Moran, B., Shen, L., Mishra, U., Etzkorn, E., and Clarke, D. (2003, January 15–19). Large area GaN HEMT power devices for power electronic applications: Switching and temperature characteristics. Proceedings of the IEEE 34th Annual Conference on Power Electronics Specialist 2003—PESC’03, Acapulco, Mexico.
4. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc. IEEE,2002
5. High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates;Xing;IEEE Electron Device Lett.,2004
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