Author:
Ishimoto Seiji,Han Dong-Pyo,Yamamoto Kengo,Mano Ryoya,Kamiyama Satoshi,Takeuchi Tetsuya,Iwaya Motoaki,Akasaki Isamu
Abstract
In this study, we compared the device performance of GaInN-based green LEDs grown on c-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage current characteristics were significantly improved by just replacing the buffer layer with a sputtered-AlN layer. To understand the origin of the improvement in performance, the electrical and optical properties were compared by means of electro-reflectance spectroscopy, I–V curves, electroluminescence spectra, L–I curves, and internal quantum efficiencies. From the analysis of the results, we concluded that the improvement is mainly due to the mitigation of strain and reduction of the piezoelectric field in the multiple quantum wells active region.
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
10 articles.
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