The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance-Reference-Cited by-同舟云学术

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

Published:2021-01 Issue: Volume:121 Page:105431
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hussin Hayatun Najihah,Talik Noor Azrina,Abd Rahman Mohd Nazri,Mahat Mohd Raqif,Poopalan Prabakaran,Shuhaimi Ahmad,Abd Majid Wan Haliza

Funder

Malaysia Ministry of Higher Education

Collaborative Research in Engineering, Science and Technology Center

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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