Abstract
A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating research and experimental research of double PVCDR RTEC were respectively reached as high as 1.79 and 22 in average, which were obtained using the designed single PVCDR RTECs structure. Also, the peak current density (PCD) values of the last NDR in the double PVCDR RTEC structure in the simulation and experiment were respectively 1.85 A and 42 µA. Triple NDR characteristics also had been obtained with the PCD values reaching as high as 2.9 A and 46 µA, respectively, in simulating and experimental researches. The PVCDR values of triple NDR characteristic were respectively 1.5 and 4.6 in the simulation and experiment.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
3 articles.
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