Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect-Reference-Cited by-同舟云学术

Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

Published:2020-03-01 Issue:3 Volume:10 Page:035103
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhao Fan¹^ORCID,Wang Yidian²,Guo Weilian²^ORCID,Cong Jia¹^ORCID,Tee Clarence Augustine T. H.³^ORCID,Song Le⁴,Zheng Yelong⁴^ORCID

Affiliation:

1. Department of Microelectronics and Solid-State Electronics, School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China

2. Department of Microelectronics and Solid-State Electronics, School of Microelectronics, Tianjin University, Tianjin 300072, China

3. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia

4. State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, China

Funder

Natural Science Foundation of Tianjin City

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5133899

Reference50 articles.

1. Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness

2. Resonant-Tunnelling Diodes as PUF Building Blocks

3. Resonant tunnelling diode terahertz sources for broadband wireless communications

4. A Proposal for Evading the Measurement Uncertainty in Classical and Quantum Computing: Application to a Resonant Tunneling Diode and a Mach-Zehnder Interferometer

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