Reliability Analysis of FinFET Based High Performance Circuits

Author:

Navaneetha Alluri1,Bikshalu Kalagadda2

Affiliation:

1. Mahatma Gandhi Institute of Technology, Hyderabad 500075, India

2. University College of Engineering, Kakatiya University, Kothagudem 507101, India

Abstract

In the VLSI industry, the ability to anticipate variability tolerance is essential to understanding the circuits’ potential future performance. The cadence virtuoso tool is used in this study to assess how PVT fluctuations affect various fin-shaped field effect transistor (FinFET) circuits. In this research, high-performance FinFET-based circuits at 7 nm are discussed with a variation in temperature and voltage. The idea behind the technology is the improvement of power dissipation and delay reduction at the rise of temperature and reduced supply voltage. With the use of a multi-gate predictive model, simulation is carried out employing diverse domino logic at the 7 nm technology node of FinFET files. The proposed set-reset logic circuit and high-speed cascade circuit method shows less power dissipation and delay compared to the existing current mirror footed domino, high-speed clocked delay, and modified high-speed clocked delay with a variation of temperature and supply voltage. For the proposed set-reset logic circuit and high speed cascade circuit, a Monte Carlo simulation is done to find the mean and standard deviation. FinFET simulations are run on the suggested circuit for the reduction of delay for the rise of temperature and reduction of supply voltage from 0.7 V to 0.3 V. In comparison, the proposed method results in a maximum power decrease compared to existing ones. Compared to the existing one, proposed techniques achieve a maximum delay and area reduction.

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Asynchronous Circular Buffers based on FIFO for Network on Chips;2023 International Conference on Circuit Power and Computing Technologies (ICCPCT);2023-08-10

2. Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications;Journal of Electrical and Computer Engineering;2023-06-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3