Investigation of electrical transport properties in heterojunctions comprised of silicon substrate and nanocrystalline iron disilicide films
Author:
Publisher
Inderscience Publishers
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08
2. The effect of deposition methods on the contact properties between Au/Cd electrodes and (111) CdZnTe wafers;J INFRARED MILLIM W;2020
3. Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering;Thin Solid Films;2020-09
4. Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering;Thin Solid Films;2020-09
5. Light Detection and Carrier Transportation Mechanism in p-Type Si/n-Type Nanocrystalline FeSi2 Heterojunctions Produced via Radio-Frequency Magnetron Sputtering;Journal of Nanoscience and Nanotechnology;2020-08-01
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