On the Generation of Paramagnetic Defects by the Abrahams-Buiocchi Etchant on Semiinsulating GaAs-Reference-Cited by-同舟云学术

On the Generation of Paramagnetic Defects by the Abrahams-Buiocchi Etchant on Semiinsulating GaAs

Published:1982-02-16 Issue:2 Volume:69 Page:K151-K156
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Goltzene A.,Meyer B.,Schwab C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. and , in: Festkörperprobleme, Vol. 20, Ed. Vieweg, Braunschweig 1980 (p. 87).

2. Submillimeter EPR evidence for the As antisite defect in GaAs

3. EPR investigations of the defect chemistry of semi-insulating GaAs : Cr

4. , , , and , Eight Internat. Symp. Gallium Arsenide and Related Compounds, Vienna, 22 to 24 September 1980, Inst. Phys. Conf. Series 56, 557 (1980).

5. , and , to be published.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Paramagnetic Resonance Analysis of Strain-Induced Defects in Semi-Insulating GaAs;physica status solidi (b);1986-11-01

2. Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs;Journal of Applied Physics;1985-06-15

3. Electron paramagnetic resonance monitoring of recovery of fast neutron irradiated GaAs;Journal of Applied Physics;1985-02-15

4. Electron paramagnetic resonance spectroscopy of fast neutron‐generated defects in GaAs;Journal of Applied Physics;1984-12-15

5. Electron paramagnetic resonance determination of the generation rate of As antisites in fast neutron irradiated GaAs;Journal of Applied Physics;1983-06