Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335256
Reference9 articles.
1. Résonance paramagnétique de défauts générés par irradiation neutronique dans l'arséniure de gallium
2. Electron paramagnetic resonance spectroscopy of fast neutron‐generated defects in GaAs
3. Experimental evidence for an associated defect model for the neutron generated ASGa center in gallium arsenide
4. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
5. On the Generation of Paramagnetic Defects by the Abrahams-Buiocchi Etchant on Semiinsulating GaAs
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1. Formation of EL2, AsGaand U band in irradiated GaAs: Effects of annealing;Journal of Applied Physics;1996-08
2. Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide;Physical Review B;1994-07-15
3. Heavily Si or Be doped MBE GaAs grown at low temperatures;Journal of Crystal Growth;1993-02
4. Chapter 2 EL2 Defect in GaAs;Imperfections in III/V Materials;1993
5. Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP;Acta Physica Polonica A;1992-11
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