Electron paramagnetic resonance monitoring of recovery of fast neutron irradiated GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334535
Reference18 articles.
1. Résonance paramagnétique de défauts générés par irradiation neutronique dans l'arséniure de gallium
2. Spectroscopic ellipsometry and Raman scattering study of the annealing behavior of Be‐implanted GaAs
3. Electron paramagnetic resonance spectroscopy of fast neutron‐generated defects in GaAs
4. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
5. Electron spin resonance of AsGaantisite defects in fast neutron‐irradiated GaAs
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1. Point defects and their reactions in electron-irradiated GaAs investigated by optical absorption spectroscopy;Physical Review B;1996-09-15
2. Formation of EL2, AsGaand U band in irradiated GaAs: Effects of annealing;Journal of Applied Physics;1996-08
3. Positron lifetime measurements on neutron‐irradiated InP crystals;Journal of Applied Physics;1996-06-15
4. Point defects and their reactions ine−-irradiated GaAs investigated by x-ray-diffraction methods;Physical Review B;1996-03-15
5. Comparison of neutron and electron irradiation on the EL2 defect in GaAs;Journal of Applied Physics;1995-04
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