Deep levels and processes in the course of degradation of GaP:N LED's
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy;Journal of Applied Physics;2020-07-14
2. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots;Journal of Applied Physics;2016-05-14
3. Formation of defects in gallium phosphide grown in the presence of oxygen;Technical Physics;1997-09
4. Models of deep centres in gallium phosphide;Semiconductor Science and Technology;1996-04-01
5. Nature of some electron traps in GaP;Semiconductor Science and Technology;1995-05-01
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